ESD Activities

Definitions:

  • ESD : ElectroStatic Discharge
  • HBM : (Human Body Model) An electrostatic discharge(ESD) event meeting the waveform criteria specified in standards, approximating the discharge from the fingertip of a typical human being to a grounded device
  • MM : (Machine Model) An electrostatic discharge (ESD) used to simulate an event occurring from a low resistance source
  • CDM : (Charge Device Model) An electrostatic discharge (ESD) used to simulate the actual discharge event that occurs when a charged device is quickly discharged to another object at a lower electrostatic potential through a single pin or terminal
  • EPA : ESD Protected Areas
  • ESD tester : Equipment that applies a HBM ESD (Thermo Keytek Zapmaster MK.2 SE) or a CDM ESD (Thermo Scientific Orion3) to a component

header

 
 Human Body Model (HBM) & Machine Model (MM)
mk2 tester

       SERMA Main Strength on HBM & MM tests

  • Fast turn around (standard within 1 week)
  • Qualification & Characterization
  • Test standards: MIL, Jedec, ESDA, AEC-Q100
  • Devices up to 512 channels (upgradeable up to 768)
  • Range HBM 8kV, MM 2kV
  • Static curve trace (5 power supplies)
  • IV curves tracing after each stress
  • Strong IV curves analyser tools
hbm circuitHjs curve 1000VHuman Body Model (HBM)

       Systems Strengths ?

  • IC & discrete devices
  • High IC device pin count test capability
  • Automatic and repeatable tests
  • Weekly waveform verifications

       Model ?

  • HBM represents the discharge from the fingertip of a standing individual delivered to the device
  • MM represents a discharge from any tool or production equipment to the device

mm circuitMjs curve 400VMachine Model (MM)

 Charged Device Model (CDM)
   
orion3

        SERMA Main Strength on CDM tests

  • Fast turn around (standard within 1 week)
  • Qualification & Characterization
  • Test standards: Jedec, ESDA, AEC-Q100
  • Range CDM 2kV
  • Test on 0.2mm pitch components
  • Automatic hygrometry control
  • 11GHz scope available (waveform verification at 6GHz)
  • Static curve tracing (with HBM tester)
   
cdm anim          Model ?
  • CDM simulates the charging or discharging of an IC through a single pin to a conductive surface, resulting in a fast-rising, high current stress.
cdm 500V
     
Additionnal information
     
ESD Area
  • Specific EPA protected area with compatible ESD floor
  • Generic boards availables (DIL, PGA, QFN ...) for test or curve tracing
  • Mapping of device pins after ESD tests
  • SERMA custom made tools for customers further analysis
  • Work on site possibility (Open Laboratory)
  • ConsultingTraining, Audit
board
     
mapping analysis tools
   

footer

Serma Technologies : BHT - Bâtiment 52 - 7, Parvis Louis Néel – CS20050 - 38040 Grenoble – France

Customer Service: csc@serma.com ; +33 (0)5 57 26 08 88

Let's read more   

LU Activities

Definitions:

  • ESD : ElectroStatic Discharge
  • LU : (Latch-Up) A state in which a low-impedance path, resulting from an overstress that triggers a parasitic thyristor structure, persists after removal or cessation of the triggering condition
  • Vsupply overvoltage test: A latch-up test that supplies overvoltage pulses to the Vsupply pin (or pin group) under test
  • Latch-up tester : Test equipment capable of performing the tests as specified in standards. For devices requiring dynamic testing, required timing signals and logic vectors may be applied by the latch-up tester itself, external equipment, and/or external components as appropriate
  • Heat source : Equipment capable of heating and maintaining the DUT at the maximum operating temperature specified in the device specification during the latch-up test
  • EPA : ESD Protected Areas

header

 
 Latch-up (LU) Tests
mk2

            SERMA Main Strength

  •     Fast turn around (standard within 1 week)
  •     Qualification & Characterization
  •     Test standards: Jedec 78, Jedec 78A-E, AEC-Q100
  •     Devices up to 512 channels (upgradeable up to 768)
  •     Current injection range: LU 1A
  •     Static curve trace and current consumption
  •     5 power supplies + 2 external supplies possibility
  •     Temperature tests up to 190°C
  •     Application circuit setup.  
   

        Test Description

  • Latch-Up is a functional chip failure associated with excessive current going through the chip, caused by weak circuit design. In some cases Latch-Up can be a temporary condition that can be resolved by power cycle, but unfortunately it can also cause a fatal chip failure.
LU waveform
     
board

        Systems Strengths ?

  • Positive and negative current injections
  • Overvoltage tests on powers
  • Incremental current injections
  • INPUT pins preconditionning
  • High IC device pin count test capability
  • Automatic and repeatable tests

       How ?

  • Continuity test
  • IDD measurements
  • Current injection (pos/neg)
  • Overvoltage stress
  • Room/High temperature
  • Power supplies
  • Application circuit
  • Basic preconditionning
     
 Additionnal information
     
esd area
  • Specific EPA protected area with compatible ESD floor
  • Generic boards availables (DIL, PGA, QFN ...) for test or curve tracing
  • Mapping of device pins after tests
  • Work on site possibility (Open Laboratory)
  • ConsultingTraining, Audit
mapping
     

footer

Serma Technologies : BHT - Bâtiment 52 - 7, Parvis Louis Néel – CS20050 - 38040 Grenoble – France

Customer Service: csc@serma.com ; +33 (0)5 57 26 08 88

Let's read more   

FIB Edit Activities

Definitions :

  • FIB : Focused Ion Beam
  • GDS : (Graphic Database System) Files used in the FIB equipment to navigate to a specific area in the integreted circuit
  • Circuit Edit : Technique used in new design flow modifications on integreted circuit; This technique can be applied to design optimization changes before final productionin, debugging process or solutions fixes 

Serma header

 
fib modif

        SERMA Main Strength

  • Fast turn around (standard within 3 Days)
  • Day night shift
  • Risk assessment
  • Optimization and checking of modification
  • Work on site possibility (Open Laboratory)
  • Data and sample security (pgp, safety box…)
  • Pre and post FIB support (sample prep, electrical characterization).
   

        Systems Strengths ?

  • Modification down to 28nm nodes
  • Frontside and backside Edit
  • Package, PCB and wafer up to 8’’
  • Type of interconnection (Cu, Al)
  • 0,5kV to 30kV beam energy
  • 1pA to 21nA current range
  • IR camera
V600         Chemistries available ?
  • Tungsten deposition (2 Ohms/o)
  • Oxide deposition (TEOS, TMCTS)
  • XeF2 (Dielectric & Si trenching)
  • I2 & Cl2  (Aluminum)
  • Water (Copper & Organics)
  • Dx (Copper, Deprocessing)
  • DE (Low-k dielectric)
     

        How ?

  • Metal lines cut
  • Metal lines rerouting
  • Selective etching for metal or dielectric
  • Conductive and dielectric deposition
  • Probe pads deposition
  • Cross-sectionning
  • Organics removal
modif3

      

        Main uses ?

  • Prototyping
  • Mask & IC modification
  • Problem solving
  • Failure analysis
  • Reverse engineering

                fib 24/24

 Circuit-Edit examples  
     

fib exemple1

gds

Using GDS files for navigation

fib exemple2
 

footer template  Serma Technologies : BHT - Bâtiment 52 - 7, Parvis Louis Néel – CS20050 - 38040 Grenoble – France

Customer Service: csc@serma.com ; +33 (0)5 57 26 08 88

Let's read more